Electrical Control for Extension of Ramsey Spin Coherence Time of Ion-Implanted Nitrogen Vacancy Centers in diamond

TL;DR

This paper demonstrates electrical control to significantly extend the spin coherence times of nitrogen vacancy centers in diamond, enhancing their potential for quantum sensing and information processing.

Contribution

It introduces a novel electrical method to suppress magnetic noise and extend coherence times in ion-implanted NV centers, a step forward for on-chip quantum devices.

Findings

Spin coherence time increased up to 10 times with electrical control.

Electrical suppression of magnetic noise improves quantum sensing capabilities.

Quantitative analysis identified the dominant decoherence sources under electric fields.

Abstract

The extension of the spin coherence times is a crucial issue for quantum information and quantum sensing. In solid state systems, suppressing noises with various techniques have been demonstrated. On the other hand, an electrical control for suppression is important toward individual controls of on-chip quantum information devices. Here we show the electrical control for extension of the spin coherence times of 40 nm-deep ion-implanted single nitrogen vacancy center spins in diamond by suppressing magnetic noises. We applied 120 V DC across two contacts spaced by 10 micrometers. The spin coherence times, estimated from a free-induction-decay and a Hahn-echo decay, were increased up to about 10 times (reaching 10 microseconds) and 1.4 times (reaching 150 microseconds), respectively. From the quantitative analysis, the dominant decoherence source depending on the applied static electric field was elucidated. The electrical control for extension can deliver a sensitivity enhancement to the DC sensing of temperature, pressure and electric (but not magnetic) fields, opening a new technique in solid-state quantum information devices.