Design of Gallium Nitride Resonant Cavity Light Emitting Diodes on Si Substrates

TL;DR

This paper presents the design and fabrication of GaN resonant cavity LEDs on silicon substrates, demonstrating significant electroluminescence enhancement through cavity engineering and theoretical predictions for further improvements.

Contribution

It introduces a novel GaN resonant cavity LED on silicon with experimental and theoretical analysis of light emission enhancement.

Findings

Electroluminescence increased by 2.5 times with cavity design

Theoretical models predict up to 8-fold enhancement with optimized structures

Resonant cavity design improves LED efficiency on silicon substrates

Abstract

A GaN resonant cavity light emitting diode was built on a GaN-AlN distributed Bragg reflector grown on a silicon substrate. The electroluminescence output increased by 2.5 times for a GaN diode coupled to a properly designed resonant cavity. Theoretical calculations showed that this enhancement could increase up to four times for transmission through a sem-transparent metal contact design, up to eight times for a flip-chip design