Ultrafast non-volatile flash memory based on van der Waals heterostructures

TL;DR

This paper introduces a novel ultrafast non-volatile flash memory using van der Waals heterostructures, achieving significantly faster write/erase speeds than existing technologies, which could revolutionize high-speed memory applications.

Contribution

It presents the first demonstration of ultrafast non-volatile memory based on MoS2/h-BN/graphene heterostructures with atomic-level interfaces and nanosecond switching speeds.

Findings

Achieved ~20 ns write/erase speed, surpassing ~100 ns of current flash memory.

Demonstrated stable non-volatile data retention.

Established a foundation for next-generation high-speed memory devices.

Abstract

Flash memory has become a ubiquitous solid-state memory device, it is widely used in portable digital devices, computers, and enterprise applications. The development of the information age has put forward higher requirements for memory speed and retention performance. Here, we demonstrate an ultrafast non-volatile memory based on MoS2/h-BN/multi-layer graphene (MLG) van der Waals heterostructures, which has an atomic-level flat interface and achieves ultrafast writing/erasing speed (~20 ns), surpassing the reported state-of-the-art flash memory (~100 ns). The ultrafast flash memory could lay the foundation for the next-generation of high-speed non-volatile memory.