Enhancing single photon emission through quasi-bound states in the continuum of monolithic hexagonal boron nitride metasurface

TL;DR

This paper presents a monolithic hexagonal boron nitride metasurface with quasi-bound states in the continuum that significantly enhances single-photon emission, achieving ultrahigh Purcell factors for potential on-chip quantum photonics applications.

Contribution

The study designs and demonstrates a novel hBN metasurface with ultrahigh Q modes and Purcell factors, advancing on-chip single-photon source technology.

Findings

Achieved ultrahigh Purcell factor of 3.3×10^4.

Enhanced fluorescence emission of SPEs in hBN.

Suitable for monolithic quantum photonics applications.

Abstract

A patterned structure of monolithic hexagonal boron nitride (hBN) on a glass substrate, which can enhance the emission of the embedded single photon emitters (SPEs), is useful for onchip single-photon sources of high-quality. Here, we design and demonstrate a monolithic hBN metasurface with quasi-bound states in the continuum mode at emission wavelength with ultrahigh Q values to enhance fluorescence emission of SPEs in hBN. Because of ultrahigh electric field enhancement inside the proposed hBN metasurface, an ultrahigh Purcell factor (3.3*10^4) is achieved. In addition, the Purcell factor can also be strongly enhanced in most part of the hBN structure, which makes the hBN metasurface suitable for e.g. monolithic quantum photonics.