All Epitaxial Fabrication of a Nanowire Plasmon Laser Structure

TL;DR

This paper demonstrates an all-epitaxial method to fabricate coaxial nanowire plasmon laser structures with strong UV emission, combining multiple materials in a novel integrated approach.

Contribution

It introduces a new all-epitaxial fabrication process for coaxial nanowire plasmon lasers with integrated material layers for UV emission.

Findings

Strong UV luminescence observed from as-grown arrays

Vertically and horizontally aligned nanowires show effective emission

Novel all-epitaxial fabrication approach achieved

Abstract

An all-epitaxial approach was demonstrated to create coaxial plasmon laser structures composed of an alumi-num plasmonic metal / SiNx dielectric / InGaN quantum well shell surrounding a p-GaN nanowire core. Strong UV lumi-nescence was observed from as-grown vertically-aligned arrays as well as horizontally-aligned nanowires transferred to a transparent carrier wafer.