Opportunities and Challenges in MOCVD of \beta-Ga2O3 for Power Electronic Devices
M.A. Mastro, J.K. Hite, C.R. Eddy, Jr., M.J. Tadjer, S.J. Pearton, F., Ren, J. Kim
TL;DR
This paper reviews recent advances and challenges in the MOCVD growth of beta-Ga2O3, emphasizing its potential for power electronic devices and discussing design considerations for thin-film applications.
Contribution
It provides a comprehensive discussion of the current challenges and design criteria for MOCVD growth of beta-Ga2O3 in power electronics, highlighting recent progress in substrate development.
Findings
Large-area beta-Ga2O3 substrates now commercially available
MOCVD growth challenges identified and analyzed
Design criteria for beta-Ga2O3 power devices discussed
Abstract
Recent breakthroughs in bulk crystal growth of beta-Ga2O3 by the edge-defined film-fed technique has led to the commercialization of large-area beta-Ga2O3 substrates. Standard epitaxy approaches are being utilized to develop various thin-film beta-Ga2O3 based devices including lateral transistors. This article will discuss the challenges for metal organic chemical vapor deposition (MOCVD) of beta-Ga2O3 and the design criteria for use of this material system in power electronic device structures.
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