Simultaneous Observation of Carrier-Specific Redistribution and Coherent Lattice Dynamics in 2H-MoTe$_{2}$ with Femtosecond Core-Level Spectroscopy
Andrew R. Attar, Hung-Tzu Chang, Alexander Britz, Xiang Zhang, Ming-Fu, Lin, Aravind Krishnamoorthy, Thomas Linker, David Fritz, Daniel M. Neumark,, Rajiv K. Kalia, Aiichiro Nakano, Pulickel Ajayan, Priya Vashishta, Uwe, Bergmann, Stephen R. Leone

TL;DR
This study uses femtosecond XUV transient absorption spectroscopy to simultaneously observe carrier relaxation and lattice vibrations in 2H-MoTe2, revealing detailed ultrafast electronic and structural dynamics in this layered semiconductor.
Contribution
It introduces a method to concurrently measure carrier dynamics and lattice vibrations in 2H-MoTe2 with femtosecond resolution, providing new insights into their interplay.
Findings
Hole thermalization time: 15±5 fs
Electron-hole recombination time: 1.5±0.1 ps
Observation of coherent lattice vibrations at 5.1 THz and 3.7 THz
Abstract
We employ few-femtosecond extreme ultraviolet (XUV) transient absorption spectroscopy to reveal simultaneously the intra- and interband carrier relaxation and the light-induced structural dynamics in nanoscale thin films of layered 2H-MoTe semiconductor. By interrogating the valence electronic structure via localized Te 4 (39-46 eV) and Mo 4 (35-38 eV) core levels, the relaxation of the photoexcited hole distribution is directly observed in real time. We obtain hole thermalization and cooling times of 155 fs and 38090 fs, respectively, and an electron-hole recombination time of 1.50.1 ps. Furthermore, excitations of coherent out-of-plane A (5.1 THz) and in-plane E (3.7 THz) lattice vibrations are visualized through oscillations in the XUV absorption spectra. By comparison to Bethe-Salpeter equation simulations, the spectral…
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Taxonomy
TopicsChalcogenide Semiconductor Thin Films · Advanced Chemical Physics Studies · 2D Materials and Applications
