Electronic Raman Scattering in Suspended Semiconducting Carbon Nanotubes

TL;DR

This paper reports the first experimental observation of electronic Raman scattering in suspended semiconducting carbon nanotubes, enabling detailed studies of their electronic properties.

Contribution

It demonstrates ERS features in semiconducting SWNTs, previously thought exclusive to metallic ones, using high-precision measurements.

Findings

ERS features observed with 1 meV accuracy in S-SWNTs

ERS processes involve high-energy electron-hole pairs

Enables systematic studies of SWNT electronic properties

Abstract

The electronic Raman scattering (ERS) features of single-walled carbon nanotubes (SWNTs) can reveal a wealth of information about their electronic structures, but have previously been thought to appear exclusively in metallic (M-) but not in semiconducting (S-) SWNTs. We report the experimental observation of the ERS features with an accuracy of 1 meV in suspended S-SWNTs, the processes of which are accomplished via the available high-energy electron-hole pairs. The ERS features can facilitate further systematic studies on the properties of SWNT, both metallic and semiconducting, with defined chirality.