Laser-Assisted Multilevel Non-Volatile Memory Device Based on 2D van-der-Waals Few-layer-ReS2/h-BN/Graphene Heterostructures

TL;DR

This paper presents a laser-assisted multilevel non-volatile memory device using 2D ReS2/h-BN/graphene heterostructures, demonstrating high performance, multi-bit storage, and opto-electrostatic coupling for potential quantum applications.

Contribution

It introduces a novel 2D heterostructure-based NVM device with laser-assisted multi-level storage and dual electronic-optical functionality, advancing 2D memory technology.

Findings

High ON/OFF current ratio achieved

Stable retention over 10^4 seconds

Multi-bit level memory via laser and electrostatic pulses

Abstract

Few-layer ReS2 field-effect transistors (FET) with a local floating gate (FG) of monolayer graphene separated by a thin h-BN tunnel layer for application to a non-volatile memory (NVM) device is designed and investigated. FG-NVM devices based on two-dimensional (2D) van-der-Waals (vdW) heterostructures have recently been studied as important components to realize digital electronics and multifunctional memory applications. Direct bandgap multilayer ReS2 satisfies various requirements as a channel material for electronic devices as well as being a strong light-absorbing layer, which makes it possible to realize light-assisted optoelectronic applications. The non-volatile memory operation with a high ON/OFF current ratio, a large memory window, good endurance (> 1000 cycles) and stable retention (> 104 s) have been observed. We demonstrate successive program and erase states using 10 millisecond gate pulses of +10 V and -10 V, respectively. Laser pulses along with electrostatic gate pulses provide multi-bit level memory access via opto-electrostatic coupling. The devices exhibit the dual functionality of a conventional electronic memory and can store laser-pulse excited signal information for future all-optical logic and quantum information processing.