Over 1% magnetoresistance ratio at room temperature in non-degenerate silicon-based lateral spin valves

TL;DR

This paper reports achieving over 1% magnetoresistance ratio at room temperature in silicon-based lateral spin valves by optimizing doping, strain, and contact properties, advancing spintronic device performance.

Contribution

It introduces a novel combination of doping profile modification and strain engineering to significantly improve MR ratio in Si-LSVs at room temperature.

Findings

Achieved 1.4% MR ratio at room temperature.

Enhanced MR through doping and strain optimization.

Reduced contact resistance and increased momentum relaxation time.

Abstract

To augment the magnetoresistance (MR) ratio of n-type non-degenerate Si-based lateral spin valves (Si-LSVs), we modify the doping profile in the Si layer and introduce a larger local strain into the Si channel by changing a capping insulator. The highest MR ratio of 1.4% is achieved in the Si-LSVs through these improvements, with significant roles played by a reduction in the resistance-area product of the ferromagnetic contacts and an enhancement of the momentum relaxation time in the Si channel.