Probing efficient n-type lanthanide dopants for Mg$_3$Sb$_2$ thermoelectrics
Jiawei Zhang, Lirong Song, Bo Brummerstedt Iversen

TL;DR
This study systematically identifies and experimentally validates efficient n-type lanthanide dopants for Mg$_3$Sb$_2$ thermoelectrics, achieving high thermoelectric performance through computational screening and doping strategies.
Contribution
It introduces a computational screening approach to identify effective lanthanide dopants and experimentally confirms Nd and Tm as superior n-type dopants for Mg$_3$Sb$_2$.
Findings
Nd and Tm doping yields high electron concentration and zT ≥ 1.3.
Codoping with Nd or Tm and Te enhances power factor and reduces thermal conductivity.
Achieved high zT values of 1.65 and 1.75 at 775 K in doped Mg$_3$Sb$_2$ samples.
Abstract
The recent discovery of n-type MgSb thermoelectric has ignited intensive research activities on searching for potential n-type dopants for this material. Using first-principles defect calculations, here we conduct a systematic computational screening of potential efficient n-type lanthanide dopants for MgSb. In addition to La, Ce, Pr, and Tm, we find that high electron concentration ( 10 cm at the growth temperature of 900 K) can be achieved by doping on the Mg sites with Nd, Gd, Ho, and Lu, which are generally more efficient than other lanthanide dopants and the anion-site dopant Te. Experimentally, we confirm Nd and Tm as effective n-type dopants for MgSb since doping with Nd and Tm shows superior thermoelectric figure of merit zT 1.3 with higher electron concentration than doping with Te. Through codoping with Nd (Tm) and Te,…
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