Large-Scale and Robust Multifunctional Vertically-Aligned MoS$_2$ Photo-Memristors
Kamalakannan Ranganathan, Mor Feingenbaum, Ariel Ismach

TL;DR
This paper presents a scalable method to produce large-area vertically aligned MoS$_2$ memristors that are low-voltage, thermally stable, and photo-responsive, suitable for advanced non-volatile memory and neuromorphic computing.
Contribution
It introduces a simple, robust growth technique for large-scale VA-MoS$_2$ films and demonstrates their multifunctional memristive properties with optical responsiveness.
Findings
Low set-ON voltages (<0.5V)
Retention times over 20,000 seconds
Thermal stability up to 350°C
Abstract
Memristive devices have drawn considerable research attention due to their potential applications in non-volatile memory and neuromorphic computing. The combination of resistive switching devices with light-responsive materials is considered a novel way to integrate optical information with electrical circuitry. On the other hand, 2D materials have attracted substantial consideration thank to their unique crystal structure, as reflected in their chemical and physical properties. Although not the major focus, van der Waals solids were proven to be potential candidates in memristive devices. In this scheme, the majority of the resistive switching devices were implemented on planar flakes, obtained by mechanical exfoliation. Here we utilize a facile and robust methodology to grow large-scale vertically aligned MoS (VA-MoS) films on standard silicon substrates. Memristive devices…
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