Thermoelectric Properties of GaN with Carrier Concentration Modulation: An Experimental and Theoretical Investigation
Ashish Kumar, Saurabh Singh, Ashutosh Patel, K. Asokan, D. Kanjilal

TL;DR
This study combines experimental measurements and theoretical calculations to explore the thermoelectric properties of n-type GaN semiconductors across a wide temperature range, revealing how carrier concentration influences the Seebeck coefficient.
Contribution
The paper provides a comprehensive experimental and computational analysis of GaN's thermoelectric properties, highlighting the impact of carrier concentration on the Seebeck coefficient and validating theoretical models with experimental data.
Findings
Seebeck coefficient decreases monotonically with increasing carrier concentration.
Experimental and theoretical results show good agreement in the 260-625 K temperature range.
Electrons are confirmed as the dominant charge carriers across the studied temperature range.
Abstract
The present work investigates the less explored thermoelectric properties of n-type GaN semiconductors by combined both the experimental and computational tools. Seebeck coefficients of epitaxial thin films of GaN were experimentally measured in the wide temperature range from 77 K to 650 K in steps of ~10 K covering both low and high-temperature regimes as a function of carrier concentration 2 x1016, 2 x 1017, 4 x 1017 and 8 x 1017 cm-3. The measured Seebeck coefficient at room temperature was found to be highest, -374 microV/K, at the lowest concentration of 4 x 1016 cm-3 and decreases in magnitude monotonically (-327.6 microV/K, -295 microV/K, -246 microV/K for 2 x 1017, 4 x 1017, 8 x 1017 cm-3, respectively) as the carrier concentration of samples increases. Seebeck coefficient remains negative in the entire temperature range under study indicate that electrons are dominant…
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