Timing Optimisation and Analysis in the Design of 3D silicon sensors: the TCoDe Simulator

TL;DR

This paper presents the TCoDe simulator, a tool for fast modeling of carrier transport in 3D silicon sensors, enabling optimized design for improved timing and radiation resistance in particle detectors.

Contribution

The paper introduces the TCoDe simulator, a novel tool for accurate and rapid simulation of carrier dynamics in 3D silicon sensors, aiding their design and analysis.

Findings

TCoDe enables fast simulation of carrier transport.

It effectively assists in optimizing 3D sensor design.

Demonstrated usefulness in sensor analysis and development.

Abstract

Abstract: Solid state sensors having timing capabilities are becoming an absolute need in particle tracking techniques of future experiments at colliders. In this sense, silicon sensors having 3D structure are becoming an interesting solution, due to their intrinsic speed and radiation resistance. A characteristic of such devices is the strict dependence of their performance on their geometric structure, which can be widely optimised by design, thus requiring suitable tools for an accurate modeling of their behaviour. This paper illustrates the development, performance and use of the TCoDe simulator, specifically dedicated to the fast simulation of carrier transportation phenomena in solid state sensors. Some examples of its effectiveness in the design and analysis of 3D sensors is also given.