Stochastic Variations in Nanoscale HZO based Ferroelectric finFETs: A Synergistic Approach of READ Optimization and Hybrid Precision Mixed Signal WRITE Operation to Mitigate the Implications on DNN Applications
Sourav De, Md. Aftab Baig, Bo-Han Qiu, Hoang- Hiep Le, Po-Jung Sung,, Chun-Jung Su, Yao- Jen Lee, Darsen Lu

TL;DR
This paper presents a combined digital and analog approach to optimize read and write operations in HZO-based ferroelectric finFETs, addressing stochastic variations to improve DNN application performance.
Contribution
It introduces a hybrid precision mixed-signal method integrating high-precision digital and low-precision analog units for variation mitigation.
Findings
Enhanced robustness of Fe-finFETs in DNNs
Effective reduction of stochastic variation impacts
Improved accuracy in neural network computations
Abstract
This paper reports a synergistic approach of READ and WRITE optimization by deploying a high-precision digital computation unit along with a low-precision ferroelectric finFET (Fe-finFETs) based analog vector-matrix multiplication block for mitigating the impact of stochastic device variations in hafnium zirconium oxide (HZO) based Fe-finFETs.
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Taxonomy
TopicsFerroelectric and Negative Capacitance Devices · Semiconductor materials and devices · Advanced Memory and Neural Computing
