Indium-Tin-Oxide Transistors with One Nanometer Thick Channel and Ferroelectric Gating

TL;DR

This paper reports the development of high-performance indium-tin-oxide transistors with a 1 nm thick channel and ferroelectric gating, demonstrating advantages over traditional 2D and thin film transistors in terms of performance and fabrication.

Contribution

The work introduces a novel ITO transistor with a 1 nm channel and ferroelectric gate dielectric, showcasing high current, low contact resistance, and immunity to short channel effects.

Findings

Achieved 0.243 A/mm on-current with 1 nm channel

Demonstrated low contact resistance of 0.15 Ωmm

Showed large gate modulation and immunity to short channel effects

Abstract

In this work, we demonstrate high performance indium-tin-oxide (ITO) transistors with the channel thickness down to 1 nm and ferroelectric Hf0.5Zr0.5O2 as gate dielectric. On-current of 0.243 A/mm is achieved on sub-micron gate-length ITO transistors with a channel thickness of 1 nm, while it increases to as high as 1.06 A/mm when the channel thickness increases to 2 nm. A raised source/drain structure with a thickness of 10 nm is employed, contributing to a low contact resistance of 0.15 {\Omega}mm and a low contact resistivity of 1.1{\times}10-7 {\Omega}cm2. The ITO transistor with a recessed channel and ferroelectric gating demonstrates several advantages over 2D semiconductor transistors and other thin film transistors, including large-area wafer-size nanometer thin film formation, low contact resistance and contact resistivity, atomic thin channel being immunity to short channel effects, large gate modulation of high carrier density by ferroelectric gating, high-quality gate dielectric and passivation formation, and a large bandgap for the low-power back-end-of-line (BEOL) CMOS application.