Unprecedented Severe Atomic Redistribution in Germanium Induced by MeV Self-Irradiation
Tuan T. Tran, Daniel Primetzhofer

TL;DR
This study reveals a novel severe atomic redistribution in germanium caused by high-energy MeV self-irradiation, leading to unique surface ripple morphology driven by bulk atomic flow rather than erosion.
Contribution
It demonstrates unprecedented surface modifications in germanium due to MeV ion irradiation, highlighting atomic redistribution as the main mechanism for ripple formation.
Findings
Surface develops into uneven ripple morphology with increasing dose
Atomic redistribution in the bulk drives surface ripple formation
Deformation continues after irradiation, especially near the end-of-range
Abstract
We present a pronounced unprecedented surface modification of a crystalline Ge layer under heavy ion irradiation with a Ge ion beam at high energy of 2.5 MeV. Under the irradiation conditions, the Ge layer did not become porous as observed for other projectiles and lower energies but develops into an uneven ripple morphology in which the roughness monotonically increases with the irradiation doses. We show that this phenomenon is caused neither by surface erosion effect nor by a non-uniform volumetric expansion. Rather, atomic redistribution in the bulk of the material is the only drive for the ripple surface. Furthermore, the deformation of the Ge layer likely occurs to largest extend after irradiation, as indicated by the very flat interface around the end-of-range region. The observed morphology modification is discussed based on irradiation-induced plastic flow, coupled with a…
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Taxonomy
TopicsIon-surface interactions and analysis · Integrated Circuits and Semiconductor Failure Analysis · Silicon and Solar Cell Technologies
