Spin-Orbit and Strain Induced Modification in Electrical Properties of Monolayer InSb

TL;DR

This study investigates how biaxial strain and spin-orbit coupling affect the electronic properties of monolayer InSb, revealing significant changes in effective masses, bandgap closure, and work function modifications.

Contribution

It provides a detailed analysis of strain and spin-orbit effects on InSb monolayer's electronic structure using density functional theory, including effective mass and work function variations.

Findings

Effective masses decrease with tensile strain.

Bandgap closes at large tensile strain.

Work function varies with applied strain.

Abstract

In this work, the electrical properties of monolayer InSb in the presence of biaxial strain using density functional theory are investigated. Here, we first explore the band structure of InSb with and without spin-orbit coupling (SOC) consideration. The electron and hole effective mass modify with SOC consideration. The electron and hole effective masses lowered two and ten times, respectively. The location of valleys in conduction and valence band for various strains are explored, and the corresponding effective masses are reported. A lower effective mass is obtained for both electron and hole with applying tensile strain, whereas, the bandgap closes for large tensile strain. A numeric fitting has applied to effective mass versus strain, and an equation for every curve is reported. Finally, the work function of this material for different strains is obtained.