Response of Windowless Silicon Avalanche Photo-Diodes to Electrons in the 90-900 eV Range

TL;DR

This study characterizes the response of windowless silicon avalanche photo-diodes to low-energy electrons between 90 and 900 eV, demonstrating their proportional current response and energy-dependent gain, marking a novel application below 1 keV.

Contribution

First demonstration of silicon avalanche photo-diodes used to measure electrons with energies below 1 keV, showing proportional current response and energy-dependent gain.

Findings

Gain increases with electron energy, from ~2.15 at 90 eV to ~386 at 900 eV.

The diode's response is proportional to the electron current hitting its surface.

This is the first application of silicon avalanche photodiodes for sub-keV electron detection.

Abstract

We report on the characterization of the response of windowless silicon avalanche photo-diodes to electrons in the 90-900 eV energy range. The electrons were provided by a monoenergetic electron gun present in the LASEC laboratories of University of Roma Tre. We find that the avalanche photo-diode generates a current proportional to the current of electrons hitting its active surface. The gain is found to depend on the electron energy $E_e$, and varies from $2.147 \pm 0.027$ (for $E_e = 90$ eV) to $385.8 \pm 3.3$ (for $E_e = 900$ eV), when operating the diode at a bias of $V_{apd} = 350$ V.} This is the first time silicon avalanche photo-diodes are employed to measure electrons with $E_e < 1$ keV.