Light-Activated Nuclear Spin Polarization in Dilute Ferromagnetic (Ga,Mn)As
John T. Tokarski III, Clifford R Bowers, Sunil K. Thapa, Christopher, J. Stanton, Xinyu Liu, Jacek Furdyna, Brenden Magill, Giti A. Khodaparast

TL;DR
This study investigates how near band-edge optical illumination induces nuclear spin polarization in a dilute ferromagnetic semiconductor, revealing mechanisms that could affect quantum information storage in such materials.
Contribution
It provides experimental and theoretical insights into light-induced nuclear spin polarization mechanisms in (Ga,Mn)As, highlighting the impact of doping and optical conditions on hyperpolarization processes.
Findings
Photon energy dependence matches theoretical predictions.
Light-induced quadrupolar relaxation affects nuclear spin polarization.
Doping with Mn influences optical transition efficiency.
Abstract
We study light-induced nuclear spin-polarization in a thin film of Ga1-xMnxAs (x 0.04), a dilute ferromagnetic semiconductor, grown on a GaAs substrate. High-field inductively-detected Ga-71 NMR was performed with samples immersed in superfluid He to investigate the effects of continuous-wave near band-edge optical illumination on lattice nuclear spins in the ferromagnetic phase. The photon energy dependence of the light-induced NMR signals for GaAs and the GaMnAs film samples were recorded using circularly polarized light. Interpretation of the data was guided by electronic band structure calculations using the k.p method in the presence of an external magnetic field using the modified 8-band Pidgeon-Brown model. The photon energy dependence of the NMR transition intensity exhibited a shift of the absorption band edge; invariance with respect to the sense of helicity of the exciting…
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Taxonomy
TopicsPhysics of Superconductivity and Magnetism · Quantum, superfluid, helium dynamics · Quantum and electron transport phenomena
