High-Mobility Carriers Induced by Chemical Doping in the Candidate Nodal-Line Semimetal CaAgP

TL;DR

This study investigates the electronic properties of CaAgP, revealing that Pd doping introduces high-mobility electron carriers near the Dirac point and induces superconductivity at low temperatures.

Contribution

It demonstrates that chemical doping with Pd in CaAgP creates high-mobility carriers and induces superconductivity, advancing understanding of doped nodal-line semimetals.

Findings

Pd doping induces high-mobility electron carriers.

Superconductivity observed with T_c of 1.7-1.8 K.

Magnetoresistance increases at low fields.

Abstract

We report the electronic properties of single crystals of candidate nodal-line semimetal CaAgP. The transport properties of CaAgP are understood within the framework of a hole-doped nodal-line semimetal. In contrast, Pd-doped CaAgP shows a drastic increase of magnetoresistance at low magnetic fields and a strong decrease of electrical resistivity at low temperatures probably due to weak antilocalization. Hall conductivity data indicated that the Pd-doped CaAgP has not only hole carriers induced by the Pd doping, but also high-mobility electron carriers in proximity of the Dirac point. Electrical resistivity of Pd-doped CaAgP also showed a superconducting transition with onset temperature of 1.7-1.8 K.