Intrinsic piezoelectricity in monolayer $\mathrm{XSi_2N_4}$ (X=Ti, Zr, Hf, Cr, Mo and W)
San-Dong Guo, Yu-Tong Zhu, Wen-Qi Mu

TL;DR
This study uses density functional theory to reveal intrinsic piezoelectricity in monolayer XSi2N4 materials, showing how strain and elemental substitution can significantly enhance their piezoelectric coefficients for nanoscale device applications.
Contribution
It is the first computational investigation of piezoelectricity in XSi2N4 monolayers, demonstrating how strain and element substitution improve piezoelectric properties.
Findings
CrSi2N4 has the highest $d_{11}$ of 1.24 pm/V among studied monolayers.
Strain engineering can increase $d_{11}$ of MoSi2N4 by 107% at 4% tensile biaxial strain.
Substituting N with P or As in MoSi2N4 greatly enhances $d_{11}$, reaching up to 6.23 pm/V.
Abstract
Motived by experimentally synthesized (\textcolor[rgb]{0.00,0.00,1.00}{Science 369, 670-674 (2020})), the intrinsic piezoelectricity in monolayer (X=Ti, Zr, Hf, Cr, Mo and W) are studied by density functional theory (DFT). Among the six monolayers, the has the best piezoelectric strain coefficient of 1.24 pm/V, and the second is 1.15 pm/V for . Taking as a example, strain engineering is applied to improve . It is found that tensile biaxial strain can enhance of , and the at 4\% can improve by 107\% with respect to unstrained one. By replacing the N by P or As in , the can be raise substantially. For and , the is as high as 4.93 pm/V and 6.23 pm/V, which…
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