Theory of oblique-field magnetoresistance from spin centers in three-terminal spintronic devices

TL;DR

This paper develops a stochastic Liouville theory to describe magnetoresistance in spintronic devices, revealing how spin centers influence conductance and proposing experimental methods to identify their effects.

Contribution

It introduces a novel theoretical framework for understanding oblique-field magnetoresistance caused by spin centers in three-terminal spintronic devices.

Findings

Identifies pseudo-Hanle features from Pauli blocking without spin accumulation.

Predicts inverted Hanle signals from defect spin evolution.

Suggests oblique magnetic field studies to confirm spin-center transport effects.

Abstract

We present a general stochastic Liouville theory of electrical transport across a barrier between two conductors that occurs via sequential hopping through a single defect's spin-0 to spin-1/2 transition. We find magneto-conductances similar to Hanle features (pseudo-Hanle features) that originate from Pauli blocking without spin accumulation, and also predict that evolution of the defect's spin modifies the conventional Hanle response, producing an inverted Hanle signal from spin center evolution. We propose studies in oblique magnetic fields that would unambiguously determine if a magnetoconductance results from spin-center assisted transport.