Fast fourier transform and multi-Gaussian fitting of XRR data to determine the thickness of ALD grown thin films within the initial growth regime
Michaela Lammel (1, 2), Kevin Geishendorf (1, 2), Marisa Choffel, (3), Danielle Hamann (3), David Johnson (3), Kornelius Nielsch (1, 2 and, 4), Andy Thomas (1, 5) ((1) Institute for Metallic Materials, Leibniz, Institute of Solid State, Materials Science

TL;DR
This paper introduces a novel method combining Fourier transform and multi-Gaussian fitting of X-ray reflectivity data to accurately measure ultra-thin film thicknesses during the initial growth phase of atomic layer deposition, especially when traditional methods are unavailable.
Contribution
The paper presents a new technique that enables precise thickness determination of ultra-thin films using standard XRR measurements combined with Fourier and Gaussian analysis, applicable in the initial ALD growth regime.
Findings
Accurately measures film thickness down to approximately 2 nm.
Defines the model boundaries based on Gaussian separation and FWHM.
Validates the method against X-ray fluorescence spectroscopy data.
Abstract
While a linear growth behavior is one of the fingerprints of textbook atomic layer deposition processes, the growth often deviates from that behavior in the initial regime, i.e. the first few cycles of a process. To properly understand the growth behavior in the initial regime is particularly important for applications that rely on the exact thickness of very thin films. The determination of the thicknesses of the initial regime, however, often requires special equipment and techniques that are not always available. We propose a thickness determination method that is based on X-ray reflectivity (XRR) measurements on double layer structures, i.e. substrate/base layer/top layer. XRR is a standard thin film characterization method. Utilizing the inherent properties of fast Fourier transformation in combination with a multi-Gaussian fitting routine permits the determination of thicknesses…
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