Electronic and magnetic properties of stoichiometric CeAuBi$_{2}$
M. M. Piva, R. Tartaglia, G. S. Freitas, J. C. Souza, D. S., Christovam, S. M. Thomas, J. B. Le\~ao, W. Ratcliff, J. W. Lynn, C. Lane,, J.-X. Zhu, J. D. Thompson, P. F. S. Rosa, C. Adriano, E. Granado, and P. G., Pagliuso

TL;DR
This study investigates the electronic and magnetic properties of CeAuBi$_{2}$, revealing antiferromagnetic order, field-induced magnetic transitions, and pressure effects that influence electron localization.
Contribution
It provides detailed experimental insights into the magnetic structure and pressure effects on CeAuBi$_{2}$, a stoichiometric compound, using neutron diffraction and magnetotransport measurements.
Findings
CeAuBi$_{2}$ orders antiferromagnetically below 19 K.
Multiple metamagnetic transitions occur under magnetic fields.
External pressure enhances antiferromagnetic order and electron localization.
Abstract
We report the electronic and magnetic properties of stoichiometric CeAuBi single crystals. At ambient pressure, CeAuBi orders antiferromagnetically below a N\'{e}el temperature () of 19 K. Neutron diffraction experiments revealed an antiferromagnetic propagation vector , which doubles the paramagnetic unit cell along the -axis. At low temperatures several metamagnetic transitions are induced by the application of fields parallel to the -axis, suggesting that the magnetic structure of CeAuBi changes as a function of field. At low temperatures, a linear positive magnetoresistance may indicate the presence of band crossings near the Fermi level. Finally, the application of external pressure favors the antiferromagnetic state, indicating that the 4 electrons become more localized.
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