Sub-kelvin temperature management in ion traps for optical clocks

TL;DR

This paper presents scalable linear ion traps with low thermal rise for optical clocks, using modeling and measurements to precisely control and determine trap temperatures, reducing systematic uncertainties in optical frequency standards.

Contribution

The study introduces scalable ion traps with low temperature rise, combining finite-element modeling and experimental validation to accurately determine thermal behavior during operation.

Findings

Trap temperature rise remains below 700 mK under typical conditions.

Thermal distribution can be precisely modeled and measured.

Temperature uncertainty is controlled within a few hundred millikelvin.

Abstract

The uncertainty of the ac Stark shift due to thermal radiation represents a major contribution to the systematic uncertainty budget of state-of-the-art optical atomic clocks. In the case of optical clocks based on trapped ions, the thermal behavior of the rf-driven ion trap must be precisely known. This determination is even more difficult when scalable linear ion traps are used. Such traps enable a more advanced control of multiple ions and have become a platform for new applications in quantum metrology, simulation and computation. Nevertheless, their complex structure makes it more difficult to precisely determine its temperature in operation and thus the related systematic uncertainty. We present here scalable linear ion traps for optical clocks, which exhibit very low temperature rise under operation. We use a finite-element model refined with experimental measurements to determine the thermal distribution in the ion trap and the temperature at the position of the ions. The trap temperature is investigated at different rf-drive frequencies and amplitudes with an infrared camera and integrated temperature sensors. We show that for typical trapping parameters for $\mathrm{In}^{+}$, $\mathrm{Al}^{+}$, $\mathrm{Lu}^{+}$, $\mathrm{Ca}^{+}$, $\mathrm{Sr}^{+}$ or $\mathrm{Yb}^{+}$ ions, the temperature rise at the position of the ions resulting from rf heating of the trap stays below 700 mK and can be controlled with an uncertainty on the order of a few 100 mK maximum.