Scaling of Multi-contact Phase Change Device for Toggle Logic Operations
Raihan Sayeed Khan, Nadim H. Kanan, Jake Scoggin, Helena Silva, Ali, Gokirmak

TL;DR
This paper analyzes the scaling behavior of multi-contact phase change devices capable of toggle logic operations, demonstrating improved performance and non-volatility through electrothermal simulations and thermal crosstalk mechanisms.
Contribution
It introduces a novel multi-contact phase change device design utilizing thermal crosstalk for logic operations, with detailed simulation-based analysis of scaling effects.
Findings
Peak current and voltage requirements scale approximately linearly with thickness.
Thermal crosstalk enables analog routing and digital logic with fewer transistors.
Device performance improves as the device thickness is scaled down.
Abstract
Scaling of two dimensional six-contact phase change devices that can perform toggle logic operations is analyzed through 2D electrothermal simulations with dynamic materials modeling, integrated with CMOS access circuitry. Toggle configurations are achieved through a combination of isolation of some contacts from others using amorphous regions and coupling between different regions via thermal crosstalk. Use of thermal crosstalk as a coupling mechanism in a multi-contact device in the memory layer allows implementation of analog routing and digital logic operations at a significantly lower transistor count, with the added benefit of non-volatility. Simulation results show approximately linear improvement in peak current and voltage requirements with thickness scaling.
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Taxonomy
TopicsPhase-change materials and chalcogenides · Advanced Memory and Neural Computing · Thin-Film Transistor Technologies
