Anomalous Hall and Nernst effects in epitaxial films of topological kagome magnet Fe3Sn2

TL;DR

This paper reports the synthesis of high-quality epitaxial Fe3Sn2 films exhibiting large anomalous Hall and Nernst effects, highlighting their potential for topological spintronic applications and interfacial physics exploration.

Contribution

First successful growth of epitaxial Fe3Sn2 films with properties close to bulk, enabling new studies and device development in topological kagome magnets.

Findings

Large intrinsic anomalous Hall effect similar to bulk crystals

High anisotropic anomalous Nernst coefficient (1.26 μV/K)

Potential for spintronic devices and interfacial physics studies

Abstract

The topological kagome magnet (TKM) Fe3Sn2 exhibits unusual topological properties, flat electronic bands, and chiral spin textures, making it an exquisite materials platform to explore the interplay between topological band structure, strong electron correlations, and magnetism. Here we report the first synthesis of high-quality epitaxial (0001) Fe3Sn2 films with large intrinsic anomalous Hall effect close to that measured in bulk single crystals. In addition, we measured a large, anisotropic anomalous Nernst coefficient Syx of 1.26 {\mu}V/K, roughly 2-5x greater than that of common ferromagnets, suggesting the presence of Berry curvature sources near the Fermi level in this system. Crucially, the realization of high-quality Fe3Sn2 films opens the door to explore emergent interfacial physics and create novel spintronic devices based on TKMs by interfacing Fe3Sn2 with other quantum materials and by nanostructure patterning.