Experimental evidence of hidden spin polarization in silicon by using strain gradient

TL;DR

This study demonstrates that applying a strain gradient to centrosymmetric silicon induces hidden spin polarization, revealing a new way to control spin properties for spintronics applications.

Contribution

The paper shows that strain gradients can break symmetry in silicon to reveal hidden spin polarization and magnetic moments, advancing spintronics research.

Findings

Strain gradient induces hidden spin polarization in silicon.

Hidden magnetic moments lead to spin-Hall effect in Si.

Strain-mediated control offers new spintronics pathways.

Abstract

The centrosymmetric materials with hidden spin polarization are considered to be the promising candidates for realization of energy efficient spintronics systems and devices. However, the control of hidden spin polarization and resulting transport behavior is not well understood. We hypothesized that inhomogeneous strain can be the external knob to study and control hidden spin polarization. In this work, we demonstrate a strain gradient mediated symmetry breaking to discover the hidden spin polarization in centrosymmetric Si lattice. The hidden spin polarization gives rise to magnetocrystalline anisotropy and local magnetic moment along <111> directions in the Si. The local magnetic moment gives rise to spin-acoustic phonon coupling, which is the underlying cause of observed spin-Hall effect in both n-Si and p-Si. Discovery of hidden magnetic moment in Si not only challenges the fundamental understanding of the origin of the magnetism but also presents a giant leap in realization of spintronics systems.