Generalized Constant Current Method for Determining MOSFET Threshold Voltage

TL;DR

The paper introduces a generalized constant-current method for accurately extracting MOSFET threshold voltage and substrate parameters across various inversion levels, especially useful for devices with edge conduction effects in CMOS processes.

Contribution

It presents a novel charge-based model method that works over a wide current range and accounts for edge conduction effects in MOSFET threshold voltage extraction.

Findings

Effective in weak and moderate inversion regions

Applicable to devices with edge conduction effects

Provides accurate threshold voltage measurements

Abstract

A novel method for extracting threshold voltage and substrate effect parameters of MOSFETs with constant current bias at all levels of inversion is presented. This generalized constant-current (GCC) method exploits the charge-based model of MOSFETs to extract threshold voltage and other substrate-effect related parameters. The method is applicable over a wide range of current throughout weak and moderate inversion and to some extent in strong inversion. This method is particularly useful when applied for MOSFETs presenting edge conduction effect (subthreshold hump) in CMOS processes using Shallow Trench Isolation (STI).