Electrical and thermal transport properties of medium-entropy SiyGeySnx alloys
Duo Wang, Lei Liu, Mohan Chen, and Houlong Zhuang

TL;DR
This study explores the electrical and thermal transport properties of silicon-germanium-tin medium-entropy alloys, revealing tunable semiconducting behavior and potential for thermoelectric applications due to their unique transport characteristics.
Contribution
It provides the first detailed investigation of electrical and thermal transport in SiyGeySnx MEAs, showing how compositional disorder affects their properties and potential applications.
Findings
Electrical conductivity increases with Sn content.
Thermal conductivity decreases with Sn content.
Alloys exhibit tunable bandgaps from near-infrared to visible spectrum.
Abstract
Electrical and thermal transport properties of disordered materials have long been of both theoretical interest and engineering importance. As a new class of materials with an intrinsic compositional disorder, high/medium-entropy alloys (HEAs/MEAs) are being immensely studied mainly for their excellent mechanical properties. By contrast, electrical and thermal transport properties of HEAs/MEAs are less well studied. Here we investigate these two properties of silicon (Si)-germanium (Ge)-tin (Sn) MEAs, where we keep the same content of Si and Ge while increasing the content of Sn from 0 to 1/3 to tune the configurational entropy and thus the degree of compositional disorder. We predict all SiyGeySnx MEAs to be semiconductors with a wide range of bandgaps from near-infrared (0.28 eV) to visible (1.11 eV) in the light spectrum. We find that the bandgaps and effective carrier masses…
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