Profiling novel high-conductivity 2D semiconductors
Thibault Sohier, Marco Gibertini, Nicola Marzari

TL;DR
This paper identifies and analyzes 11 2D semiconductors with high electrical conductivity driven by electron-phonon interactions, using advanced computational methods to discover new promising materials for electronic applications.
Contribution
The study combines density-functional perturbation theory and Boltzmann transport calculations to identify novel high-conductivity 2D semiconductors from a large database, highlighting the importance of electron-phonon scattering features.
Findings
Several high-conductivity 2D materials identified, including recent and novel compounds.
Electron-phonon interaction strength and anisotropy significantly influence transport performance.
Limitations of band property-based selection methods are demonstrated.
Abstract
When complex mechanisms are involved, pinpointing high-performance materials within large databases is a major challenge in materials discovery. We focus here on phonon-limited conductivities, and study 2D semiconductors doped by field effects. Using state-of-the-art density-functional perturbation theory and Boltzmann transport equation, we discuss 11 monolayers with outstanding transport properties. These materials are selected from a computational database of exfoliable materials providing monolayers that are dynamically stable and that do not have more than 6 atoms per unit cell. We first analyse electron-phonon scattering in two well-known systems: electron-doped InSe and hole-doped phosphorene. Both are single-valley systems with weak electron-phonon interactions, but they represent two distinct pathways to fast transport: a steep and deep isotropic valley for the former and…
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