Tunable spin Hall and spin Nernst effects in Dirac line-node semimetals XCuYAs (X=Zr, Hf; Y=Si, Ge)
Babu Baijnath Prasad, Guang-Yu Guo

TL;DR
This study investigates Dirac line-node semimetals XCuYAs compounds, revealing their large, tunable spin Hall and spin Nernst effects driven by topological features, with potential applications in spintronics.
Contribution
It provides the first detailed analysis of SHE and SNE in XCuYAs compounds, highlighting their large, tunable spin transport properties linked to Dirac line-nodes and spin-orbit coupling effects.
Findings
Large spin Hall conductivity in HfCuGeAs (-514 S/cm)
Significant spin Nernst conductivity at room temperature (-0.73 A/m-K)
Tunability of SHE and SNE via electric field, doping, or gating
Abstract
The quaternary arsenide compounds XCuYAs (X=Zr, Hf; Y= Si, Ge) belong to the vast family of the 1111-type quaternary compounds, which possess outstanding physical properties ranging from -type transparent semiconductors to high-temperature Fe-based superconductors. In this paper, we study the electronic structure topology, spin Hall effect (SHE) and spin Nernst effect (SNE) in these compounds based on density functional theory calculations. First we find that the four considered compounds are Dirac semimetals with the nonsymmorphic symmetry-protected Dirac line nodes along the Brillouin zone boundary - and - and low density of states (DOS) near the Fermi level (). Second, the intrinsic SHE and SNE in some of these considered compounds are found to be large. In particular, the calculated spin Hall conductivity (SHC) of HfCuGeAs is as large as -514 (/e)(S/cm).…
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