Dynamic modulation of phonon-assisted transitions in quantum defects in monolayer transition-metal dichalcogenide semiconductors

TL;DR

This paper investigates how spin-orbit coupling influences electron-phonon interactions in quantum defects within monolayer transition-metal dichalcogenides, revealing a method to dynamically control defect properties for quantum applications.

Contribution

It demonstrates that spin-orbit interactions can be used to modulate electron-phonon coupling in quantum defects, enabling dynamic tuning of material properties.

Findings

Spin-orbit coupling affects electron-phonon interaction strength.

Modulation of defect transition efficiencies via spin-orbit effects.

Potential for dynamic control of quantum defect behavior.

Abstract

Quantum localization via atomic point defects in semiconductors is of significant fundamental and technological importance. Quantum defects in monolayer transition-metal dichalcogenide semiconductors have been proposed as stable and scalable optically-addressable spin qubits. Yet, the impact of strong spin-orbit coupling on their dynamical response, for example under optical excitation, has remained elusive. In this context, we study the effect of spin-orbit coupling on the electron-phonon interaction in a single chalcogen vacancy defect in monolayer transition metal dichalcogenides, molybdenum disulfide (MoS$_2$) and tungsten disulfide (WS$_2$). From ab initio electronic structure theory calculations, we find that spin-orbit interactions tune the magnitude of the electron-phonon coupling in both optical and charge-state transitions of the defect, modulating their respective efficiencies. This observation opens up a promising scheme of dynamically modulating material properties to tune the local behavior of a quantum defect.