Analytical Modelling of Ferroelectricity Instigated Enhanced Electrostatic Control in Short-Channel FinFETs

TL;DR

This paper presents an analytical model and simulation results demonstrating that negative capacitance in FinFETs greatly enhances electrostatic control, especially in short-channel devices, by reducing subthreshold swing and DIBL effects.

Contribution

It introduces a compact analytical model to quantify subthreshold swing improvements in negative-capacitance FinFETs, highlighting advantages for scaled MOSFETs.

Findings

Negative capacitance reduces subthreshold swing significantly.

Short-channel FinFETs benefit more from negative capacitance.

Analytical formulation accurately predicts performance improvements.

Abstract

This study simulated negative-capacitance double gate FinFETs with channel lengths ranging from 25nm to 100nm using TCAD. The results show that negative capacitance significantly reduces subthreshold swing as well as drain induced barrier lowering effects. The improvement is found to be significantly more prominent for short channel devices than long ones, which demonstrates the tremendous advantage of negative capacitance gate stack for scaled MOSFETs. A compact analytical formulation is developed to quantify sub-threshold swing improvement for short channel devices.