Melting and crystallization in layered film system Ge-Bi

TL;DR

This study investigates melting and crystallization behaviors in layered Bi-Ge films, revealing how Bi film thickness affects melting temperature and providing measurements of eutectic temperature, supercooling, and wetting angle.

Contribution

It presents new experimental data on melting and crystallization in Bi-Ge layered films, including the effect of film thickness and precise thermodynamic measurements.

Findings

Melting temperature decreases with thinner Bi films.

Eutectic temperature measured at 542 K.

Supercooling of 93 K and wetting angle of 68° determined.

Abstract

The results of studies of melting and crystallization processes in Bi-Ge layered film system are presented. These systems were prepared by subsequent condensation of components in vacuum. It has been shown that the melting temperature in system under study decreases with the decrease of Bi film thickness. The differential technique used for melting temperature registration enables us to measure the value of eutectic temperature $T_\epsilon$ = 542 K in the system. The values of supercooling upon crystallization ($\Delta T$ = 93 K) and wetting angle ($\theta = 68^\circ$) have been determined for Bi islands on amorphous Ge substrate.