Determination of carrier density and dynamics via magneto-electroluminescence spectroscopy in resonant tunneling diodes

TL;DR

This study demonstrates that magneto-electroluminescence spectroscopy effectively reveals charge carrier dynamics in resonant tunneling diodes, complementing traditional magneto-transport measurements and aiding the development of more efficient opto-electronic devices.

Contribution

It introduces magneto-electroluminescence spectroscopy as a versatile tool for analyzing charge carrier behavior in resonant tunneling diodes, enhancing understanding beyond conventional methods.

Findings

Landau level splitting observed in electroluminescence

Carrier densities comparable with and without prewell

Spectroscopy provides insights into charge build-up

Abstract

We study the magneto-transport and magneto-electroluminescence properties of purely n-doped GaAs/Al$_{0.6}$Ga$_{0.4}$As resonant tunneling diodes with an In$_{0.15}$Ga$_{0.85}$As quantum well and emitter prewell. Before the resonant current condition, magneto-transport measurements reveal charge carrier densities comparable for diodes with and without the emitter prewell. The Landau level splitting is observed in the electroluminescence emission from the emitter prewell, enabling the determination of the charge carrier build-up. Our findings show that magneto-electroluminescence spectroscopy techniques provide useful insights on the charge carrier dynamics in resonant tunneling diodes and is a versatile tool to complement magneto-transport techniques. This approach will drive the way for developing potentially more efficient opto-electronic resonant tunneling devices, by e.g., monitoring voltage dependent charge accumulation for improving built-in fields and hence to maximize photodetector efficiency and/or minimize optical losses.