Prediction of intrinsic ferroelectricity and large piezoelectricity in monolayer arsenic chalcogenides
Weiwei Gao, James R Chelikowsky

TL;DR
This paper predicts that monolayer arsenic chalcogenides are intrinsic ferroelectrics with strong in-plane piezoelectricity, supported by theoretical calculations and phonon mode analysis, expanding the family of 2D ferroelectric materials.
Contribution
It demonstrates that arsenic chalcogenides in the Pmn2$_1$ phase are intrinsic ferroelectrics with large piezoelectricity, and identifies potential new metastable polymorphs with functional properties.
Findings
Pmn2$_1$ phase is an intrinsic ferroelectric with reasonable energy barriers.
Soft phonon modes induce phase transformation from high-symmetry to ferroelectric phase.
Discovered metastable polar phase with sizable piezoelectricity.
Abstract
Two-dimensional materials that exhibit spontaneous electric polarization are of notable interest for functional materials. However, despite many two-dimensional polar materials are predicted in theory, the number of experimentally confirmed two-dimensional ferroelectrics are still far less than bulk ferroelectrics. We provide strong evidence that the Pmn2 phase of arsenic chalcogenides AsX (X=S, Se, and Te), which include the recently isolated monolayer orpiment, are intrinsic ferroelectrics and demonstrate strong in-plane piezoelectricity. We found the calculated energy barriers for collectively reversing the electric polarization or moving a 180 domain wall are reasonable compared to previously reported ferroelectrics. We propose a high-symmetry structure (with Pmmn space group) transforms into the ferroelectric Pmn2 phase by a soft B phonon mode. By…
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