Spin transport in polarization induced two dimensional confinement of carriers in wedge shaped \textit{c}-GaN nanowalls

TL;DR

This paper theoretically investigates spin transport in a polarization-induced 2D electron gas in wedge-shaped GaN nanowalls, revealing suppressed Rashba effect and a novel electrically controlled spin transistor.

Contribution

It introduces a theoretical model showing suppressed Rashba effect and spin relaxation control in wedge-shaped GaN nanowalls, proposing a new all-electrical spin transistor.

Findings

Spin relaxation is suppressed at low temperatures in the system.

Applying a gate bias can switch spin relaxation on.

A novel all-electrical spin transistor concept is proposed.

Abstract

Spin transport property of polarization induced two-dimensional electron gas channel formed in the central vertical plane of a wedge-shaped \textit{c}-oriented GaN nanowall is investigated theoretically. Since the confining potential preserves the spatial symmetry between the conduction and valence band, the Rashba effect is suppressed in this system even when the shape of the wedge is asymmetric. It has been found that the relaxation of the electron spin oriented along the direction of the confinement via D'yakonov-Perel' (DP) mechanism, which is the dominant process of relaxation in this high mobility channel, is entirely switched off at low temperatures. Spin relaxation can be turned on by applying a suitable bias at the gate. Exploiting this remarkable effect, a novel all electrically driven spin-transistor has been proposed.