Optical spin initialization of spin-3/2 silicon vacancy centers in 6H-SiC at room temperature

TL;DR

This paper demonstrates room-temperature optical spin initialization of silicon vacancy centers in 6H-SiC, enabling potential quantum technology applications by controlling spin states with optical methods.

Contribution

It provides the first detailed study of optical spin initialization of spin-3/2 silicon vacancies in 6H-SiC, including a rate equation model explaining the process.

Findings

Measured Rabi frequencies and spin-lattice relaxation times for all transitions.

Achieved optical initialization of silicon vacancy spin ensemble in 6H-SiC.

Developed a rate equation model explaining the optical spin initialization behavior.

Abstract

Silicon vacancies in silicon carbide have been proposed as an alternative to nitrogen vacancy centers in diamonds for spintronics and quantum technologies. An important precondition for these applications is the initialization of the qubits into a specific quantum state. In this work, we study the optical alignment of the spin 3/2 negatively charged silicon vacancy in 6H-SiC. Using a time-resolved optically detected magnetic resonance technique, we coherently control the silicon vacancy spin ensemble and measure Rabi frequencies and spin-lattice relaxation time of all three transitions. Then to study the optical initialization process of the silicon vacancy spin ensemble, the vacancy spin ensemble is prepared in different ground states and optically excited. We describe a simple rate equation model that can explain the observed behaviour and determine the relevant rate constants.