Blueshift of high-order harmonic generation in crystalline silicon subjected to intense femtosecond near-infrared laser pulse

TL;DR

This paper investigates high-order harmonic generation in crystalline silicon under intense femtosecond near-infrared laser pulses, revealing a blueshift phenomenon that could aid in developing tunable XUV sources.

Contribution

It demonstrates the occurrence of a blueshift in high harmonics in silicon and distinguishes between perturbative and non-perturbative generation regimes under intense laser fields.

Findings

Harmonic spectrum extends from near-infrared to extreme ultraviolet.

Harmonic blueshift is independent of harmonic order.

Two regimes of harmonic generation identified: perturbative and non-perturbative.

Abstract

We present the generation of high order harmonics in crystalline silicon subjected to intense near-infrared 30fs laser pulse. The harmonic spectrum extends from the near infrared to the extreme ultraviolet spectral region. Depending on the pulsed laser intensity, we distinguish two regimes of harmonic generation: (i) perturbative regime: electron-hole pairs born during each half-cycle of the laser pulse via multiphoton and tunnel transitions are accelerated in the laser electric field and gain kinetic energy; the electron-hole pairs then recombine in the ground state by emitting a single high-energy photon. The resultant high harmonic spectrum consists of sharp peaks at odd harmonic orders. (ii) non-perturbative regime: the intensity of the harmonics increases, their spectral width broadens and the position of harmonics shifts to shorter wavelengths. The blueshift of high harmonics in silicon are independent on the harmonic order which may be helpful in the design of continuously tunable XUV sources.