Embracing the Unreliability of Memory Devices for Neuromorphic Computing
Marc Bocquet, Tifenn Hirtzlin, Jacques-Olivier Klein, Etienne Nowak,, Elisa Vianello, Jean-Michel Portal, Damien Querlioz

TL;DR
This paper proposes a brain-inspired hybrid CMOS/RRAM memory architecture for neuromorphic computing that tolerates device unreliability without traditional error correction, enabling energy-efficient neural network implementation.
Contribution
It introduces a differential hybrid CMOS/RRAM architecture designed for neural networks that operates reliably despite device unreliability without using ECC.
Findings
Low-energy programming slightly reduces network accuracy
The architecture functions effectively without formal ECC
Device unreliability can be managed in neuromorphic systems
Abstract
The emergence of resistive non-volatile memories opens the way to highly energy-efficient computation near- or in-memory. However, this type of computation is not compatible with conventional ECC, and has to deal with device unreliability. Inspired by the architecture of animal brains, we present a manufactured differential hybrid CMOS/RRAM memory architecture suitable for neural network implementation that functions without formal ECC. We also show that using low-energy but error-prone programming conditions only slightly reduces network accuracy.
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Taxonomy
TopicsAdvanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Semiconductor materials and devices
