Magnon-bipolar carrier drag thermopower in antiferromagnetic/ferromagnetic semiconductors: theoretical formulation and experimental evidence
Md Mobarak Hossain Polash, Daryoosh Vashaee

TL;DR
This paper develops a theoretical model for magnon-bipolar carrier drag thermopower in magnetic semiconductors, predicts its independence from relaxation times, and provides experimental evidence of this phenomenon in doped MnTe.
Contribution
The paper introduces a novel theoretical formulation for magnon-bipolar carrier drag thermopower and experimentally verifies its predictions in various doped magnetic semiconductors.
Findings
Magnon-bipolar drag thermopower is independent of carrier and magnon relaxation times.
Experimental observation of magnon-carrier drag thermopower in n-type and intrinsic ferromagnetic semiconductors.
Cr doping alters the sign and magnitude of thermopower due to magnon-electron interactions.
Abstract
Quantized spin-wave known as magnon, a bosonic quasiparticle, can drag electrons or holes via sd exchange interaction and boost the thermopower over the conventional diffusive thermopower. P-type magnon-drag thermopower has been observed in both ferromagnetic and antiferromagnetic metallic and degenerate semiconductors. However, it has been less reported for intrinsic or n-type magnetic semiconductors; therefore, the impact of magnon-bipolar carrier drag on thermopower has remained unexplored. Here, a theoretical model for magnon-bipolar carrier drag thermopower is derived based on the magnon-carrier interaction lifetimes. The model predicts that the bipolar carrier drag thermopower becomes independent of both the carrier and magnon relaxation times. A proof of concept experiment is presented that confirms this prediction. We also report the observation of magnon-carrier drag…
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