Quantum interference effects of out-of-plane confinement on two-dimensional electron systems in oxides
A. F. Santander-Syro, J. Dai, T. C. R\"odel, E. Frantzeskakis, F., Fortuna, R.Weht, M. J. Rozenberg

TL;DR
This paper models how out-of-plane confinement influences the electronic structure of oxide surfaces, explaining experimental ARPES observations through a simplified tight-binding approach informed by density functional calculations.
Contribution
It introduces a minimal model combining tight-binding and confining potential to interpret ARPES data on oxide surfaces, highlighting the role of confinement parameters.
Findings
Explains photoemission intensity modulation and apparent dispersion along $k_z$.
Identifies key parameters: hopping strength and potential aspect ratio.
Provides insights into the nature of surface electronic wave functions.
Abstract
It was recently discovered that a conductive, metallic state is formed on the surface of some insulating oxides. Firstly observed on SrTiO(001), it was then found in other compounds as diverse as anatase TiO, KTaO, BaTiO, ZnO, and also on different surfaces of SrTiO (or other oxides) with different symmetries. The spatial extension of the wave function of this electronic state is of only a few atomic layers. Experiments indicate its existence is related to the presence of oxygen vacancies induced at or near the surface of the oxide. In this article we present a simplified model aimed at describing the effect of its small spatial extension on measurements of its 3D electronic structure by angular resolved photoemission spectroscopy (ARPES). For the sake of clarity, we base our discussion on a simple tight binding scheme plus a confining potential that is assumed to be…
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