Effect of Strain on Band Engineering in Gapped Graphene

TL;DR

This paper investigates how applying strain affects the electronic band structure of gapped graphene under various polarized external fields, revealing anisotropic modifications and strain-dependent band gap changes.

Contribution

It introduces a comprehensive analysis of strain effects on band engineering in gapped graphene using Floquet theory with different polarization fields.

Findings

Energy spectrum symmetry varies with strain and polarization.

Band gap can be tuned by strain magnitude and polarization phase.

Strain causes anisotropic changes in the energy spectrum.

Abstract

We study the effect of strain on the band engineering in gapped graphene subject to external sources. By applying the Floquet theory, we determine the effective Hamiltonian of electron dressed by a linearly, circularly and an elliptically polarized dressing field in the presence of strain along armchair and zigzag directions. Our results show that the energy spectrum exhibits different symmetries and for the strainless case it takes an isotropic and anisotropic forms whatever the values of irradiation intensity, whereas it is linear as in the case of pristine graphene. It increases slowly when strain is applied along the armchair direction but rapidly for the zigzag case. Moreover, it is found that the renormalized band gap changes along different strain magnitudes and does not change for the polarization phase $\theta$ compared to linear and circular polarizations where its values change oppositely.