Strong spin-orbit interaction and $g$-factor renormalization of hole spins in Ge/Si nanowire quantum dots
F. N. M. Froning, M. J. Ran\v{c}i\'c, B. Het\'enyi, S. Bosco, M. K., Rehmann, A. Li, E. P. A. M. Bakkers, F. A. Zwanenburg, D. Loss, D. M., Zumb\"uhl, F. R. Braakman

TL;DR
This paper experimentally characterizes the strong and tunable spin-orbit interaction in hole spins within Ge/Si nanowire quantum dots, revealing a short spin-orbit length and significant $g$-factor enhancement, promising for quantum computing and topological states.
Contribution
The study provides the first experimental measurement of the spin-orbit length and $g$-factor renormalization in hole spins in Ge/Si nanowires, confirming theoretical predictions and highlighting their potential for quantum applications.
Findings
Spin-orbit length of ~65 nm measured in Ge/Si nanowire quantum dots.
Large magnetic field dependence of spin-mixing transition energies observed.
Significant $g$-factor enhancement with magnetic field due to strong spin-orbit interaction.
Abstract
The spin-orbit interaction lies at the heart of quantum computation with spin qubits, research on topologically non-trivial states, and various applications in spintronics. Hole spins in Ge/Si core/shell nanowires experience a spin-orbit interaction that has been predicted to be both strong and electrically tunable, making them a particularly promising platform for research in these fields. We experimentally determine the strength of spin-orbit interaction of hole spins confined to a double quantum dot in a Ge/Si nanowire by measuring spin-mixing transitions inside a regime of spin-blockaded transport. We find a remarkably short spin-orbit length of 65 nm, comparable to the quantum dot length and the interdot distance. We additionally observe a large orbital effect of the applied magnetic field on the hole states, resulting in a large magnetic field dependence of the spin-mixing…
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