High-responsivity graphene photodetectors integrated on silicon microring resonators

TL;DR

This paper presents a graphene-based photodetector integrated with silicon microring resonators that achieves high responsivity and data rates, offering a compact, energy-efficient alternative to traditional semiconductor photodetectors.

Contribution

The authors demonstrate a novel integration of a photo-thermoelectric graphene photodetector with silicon microring resonators, significantly enhancing responsivity and bandwidth.

Findings

Achieved >90% light absorption in a 6 μm graphene channel.

Demonstrated voltage responsivity of ~90 V/W.

Supported data rates up to 20 Gbit/s with low error rates.

Abstract

Graphene integrated photonics provides several advantages over conventional Si photonics. Single layer graphene (SLG) enables fast, broadband, and energy-efficient electro-optic modulators, optical switches and photodetectors (GPDs), and is compatible with any optical waveguide. The last major barrier to SLG-based optical receivers lies in the low responsivity - electrical output per optical input - of GPDs compared to conventional PDs. Here we overcome this shortfall by integrating a photo-thermoelectric GPD with a Si microring resonator. Under critical coupling, we achieve $>$90% light absorption in a $\sim$6 $\mu$m SLG channel along the Si waveguide. Exploiting the cavity-enhanced light-matter interaction, causing carriers in SLG to reach $\sim$400 K for an input power of $\sim$0.6 mW, we get a voltage responsivity $\sim$90 V/W, demonstrating the feasibility of our approach. Our device is capable of detecting data rates up to 20 Gbit/s, with a receiver sensitivity enabling it to operate at a 10$^{-9}$ bit-error rate, on par with mature semiconductor technology. The natural generation of a voltage rather than a current, removes the need for transimpedance amplification, with a reduction of the energy-per-bit cost and foot-print, when compared to a traditional semiconductor-based receiver.