Bright single photon sources in lateral silicon carbide light emitting diodes

TL;DR

This paper demonstrates the integration of electrically driven single-photon emitters within a lateral silicon carbide diode, highlighting silicon carbide's potential as a platform for quantum communication applications.

Contribution

It introduces a novel lateral silicon carbide diode design that hosts electrically controllable single-photon emitters, expanding quantum photonics capabilities.

Findings

Discovery of new color centers emitting non-classical light in VIS and NIR.

Electrical excitation of single-photon emitters within silicon carbide.

Silicon carbide's suitability for integrated quantum photonic devices.

Abstract

Single-photon emitting devices have been identified as an important building block for applications in quantum information and quantum communication. They allow to transduce and collect quantum information over a long distance via photons as so called flying qubits. In addition, substrates like silicon carbide provides an excellent material platform for electronic devices. In this work we combine these two features and show that one can drive single photon emitters within a silicon carbide p-i-n-diode. To achieve this, we specifically designed a lateral oriented diode. We find a variety of new color centers emitting non-classical lights in VIS and NIR range. One type of emitter can be electrically excited, demonstrating that silicon carbide can act as an ideal platform for electrically controllable single photon sources.