Entropy-reduced retention times in magnetic memory elements: A case of the Meyer-Neldel Compensation Rule
L. Desplat, J.-V. Kim

TL;DR
This paper investigates the thermally-activated magnetization reversal times in magnetic memory elements, revealing that the Arrhenius prefactor varies significantly with material parameters and follows the Meyer-Neldel rule, challenging traditional assumptions.
Contribution
It demonstrates that the Arrhenius prefactor in magnetic memory elements can be extremely large and energy-dependent, illustrating a case of the Meyer-Neldel compensation rule in magnetic switching.
Findings
Prefactor can reach up to 10^21 Hz
Prefactor varies exponentially with activation energy
Modeling with a constant prefactor is inadequate
Abstract
We compute mean waiting times between thermally-activated magnetization reversals in a nanodisk with parameters similar to a free CoFeB layer used in magnetic random access memories. By combining Langer's theory and forward flux sampling simulations, we show that the Arrhenius prefactor can take values up to 10 Hz, orders of magnitude beyond the value of 10 Hz typically assumed, and varies drastically as a function of material parameters. We show that the prefactor behaves like an exponential of the activation energy, which highlights a case of the Meyer-Neldel compensation rule. This suggests that modeling information retention times with a barrier-independent prefactor in such magnetic storage elements is not justified.
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