Vector Electrometry in a Wide-Gap Semiconductor Device Using a Spin Ensemble Quantum Sensor

TL;DR

This paper demonstrates vector electrometry in a wide-gap semiconductor device using an ensemble of nitrogen-vacancy centers in diamond, enabling precise measurement of electric field components within the device.

Contribution

It introduces a novel method for vector electrometry with NV centers and demonstrates its application in measuring electric fields in a semiconductor device.

Findings

Enhanced energy level shift response to transverse electric fields.

Successful measurement of electric field components along multiple NV axes.

Validation of ensemble NV centers for vector electric field sensing.

Abstract

Nitrogen-vacancy (NV) centers in diamond work as a quantum electrometer. Using an ensemble state of NV centers, we propose vector electrometry and demonstrate measurements in a diamond electronic device. A transverse electric field applied to the N-V axis under a high voltage was measured while applying a transverse magnetic field. The response of the energy level shift against the electric field was significantly enhanced compared with that against an axial magnetic field. Repeating the measurement of the transverse electric field for multiple N-V axes, we obtained the components of the electric field generated in the device.